Download TSM900N06 Datasheet PDF
Taiwan Semiconductor
TSM900N06
TO-251S (IPAK SL) SOT-223 60V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value RDS(on) (max) VGS = 10V VGS = 4.5V 60 90 100 Qg 9.3 Unit V mΩ n C Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252 2.5kpcs / 13” Reel TSM900N06CW RPG SOT-223 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony pounds Block Diagram Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Tc=25°C Tc=100°C Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Total Power @ TC=25°C Dissipation Derate above TC=25°C Operating Junction Temperature Storage Temperature...