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TSM900N06CH - N-Channel Power MOSFET

TSM900N06CH Description

TSM900N06CH Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ .

TSM900N06CH Features

* 100% UIS and Rg tested
* Logic-level gate drive
* Fast switching
* RoHS Compliant

TSM900N06CH Applications

* DC-DC Converters
* Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 Qg VGS = 10V 9.5 UNIT V mΩ nC TO-251S (IPAK SL) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM900N06CH-like datasheet