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TSM900N06CP Datasheet - Taiwan Semiconductor

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TSM900N06CP N-Channel Power MOSFET

TSM900N06CP Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ .

TSM900N06CP-TaiwanSemiconductor.pdf

Preview of TSM900N06CP PDF

Datasheet Details

Part number:

TSM900N06CP

Manufacturer:

Taiwan Semiconductor

File Size:

579.38 KB

Description:

N-Channel Power MOSFET

Features

* 100% UIS and Rg tested
* Logic-level gate drive
* Fast switching
* RoHS Compliant

Applications

* DC-DC Converters
* Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 Qg VGS = 10V 9.5 UNIT V mΩ nC TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless othe

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