Download TSM900N10 Datasheet PDF
Taiwan Semiconductor
TSM900N10
FEATURES - 100% avalanche tested - Low gate charge for fast switching - Pb-free plating - Ro HS pliant - Halogen-free mold pound APPLICATION - Networking - Load Switching - LED Lighting Control - AC-DC Secondary Rectification TO-251S (IPAK SL) KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VGS = 10V VGS = 4.5V Qg 100 90 100 9.3 V mΩ n C TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS IDM PDTOT EAS IAS TJ, TSTG 100 ±20 15 9.5 60 50 18 - 55 to...