TSP15U50S Datasheet - Taiwan Semiconductor

TSP15U50S, Trench MOS Barrier Schottky Rectifier

TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/

TSP15U50S_TaiwanSemiconductor.pdf