TSP15U50S

Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

TSP15U50S Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/

TSP15U50S General Description

Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 20 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC 10 TJ=125oC AVERAGE FORWARD CURRENT (A) 15 10 1 TJ=100oC 0.1 TJ=25oC 0.01 0 0.2 0.4 .

TSP15U50S Datasheet (199.55 KB)