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TSP15U50S Trench MOS Barrier Schottky Rectifier

TSP15U50S Description

TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

TSP15U50S Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/

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Datasheet Details

Part number
TSP15U50S
Manufacturer
Taiwan Semiconductor
File Size
199.55 KB
Datasheet
TSP15U50S_TaiwanSemiconductor.pdf
Description
Trench MOS Barrier Schottky Rectifier

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📌 All Tags

Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor
Taiwan Semiconductor TSP15U50S-like datasheet