3NZ41 Datasheet, Application, Taychipst

3NZ41 Features

  • Application D Repetitive Peak Reverse Voltage D Average Forward Current D Peak One Cycle Surge Forward Current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS CHARACTERISTIC SYMBOL

PDF File Details

Part number:

3NZ41

Manufacturer:

Taychipst

File Size:

1.91MB

Download:

📄 Datasheet

Description:

General purpose rectifier application.

Datasheet Preview: 3NZ41 📥 Download PDF (1.91MB)
Page 2 of 3NZ41

TAGS

3NZ41
GENERAL
PURPOSE
RECTIFIER
APPLICATION
Taychipst

📁 Related Datasheet

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N10L26 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), l.

3N124 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

3N125 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

3N126 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

3N128 - MOSFET AMPLIFIER (Motorola)
MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T/^ = 25°C Derate above 25°.

3N128 - Silicon MOS Transistor (General Electric Solid State)
.

3N140 - N-CHANNEL DUAL-GATE TRANSISTOR (ETC)
1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual-gate transistor designed for .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts