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TDM2306 N-Channel Enhancement Mode MOSFET

TDM2306 Description

    N-Channel Enhancement Mode Power MOSFET   Datasheet TDM2306 .
 The TDM2306 uses advanced trench technology to provide  excellent R , low gate charge and operation with gate  DS(ON)  voltages as low as 2.

TDM2306 Features

* VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

TDM2306 Applications

* Load switch
* Power management Schematic diagram Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating

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Datasheet Details

Part number
TDM2306
Manufacturer
Techcode
File Size
322.11 KB
Datasheet
TDM2306-Techcode.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Techcode
Techcode TDM2306-like datasheet