MDA7770
Tesla
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MDA710-22N2 - Dual Diode Modules
(IXYS)
IXYS
Date: 29.08.2014 Data Sheet Issue: 3
Dual Diode Modules MD#710-22N2-26N2
Absolute Maximum Ratings
VRRM [V]
2200 2400 2600
MDD 710-22N2 710-24.
MDA710-24N2 - Dual Diode Modules
(IXYS)
IXYS
Date: 29.08.2014 Data Sheet Issue: 3
Dual Diode Modules MD#710-22N2-26N2
Absolute Maximum Ratings
VRRM [V]
2200 2400 2600
MDD 710-22N2 710-24.
MDA710-26N2 - Dual Diode Modules
(IXYS)
IXYS
Date: 29.08.2014 Data Sheet Issue: 3
Dual Diode Modules MD#710-22N2-26N2
Absolute Maximum Ratings
VRRM [V]
2200 2400 2600
MDD 710-22N2 710-24.
MDA72 - Diode Modules
(IXYS Corporation)
MDD 72 MDA 72
Diode Modules
3 1 2
IFRMS = 2x 180 A IFAVM = 2x 113 A VRRM = 800-1800 V
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 180.
MDA72-08N1B - High Voltage Standard Rectifier
(IXYS)
High Voltage Standard Rectifier Module
Common Anode
MDA72-08N1B
VRRM I FAV VF
= 800 V = 2x 99 A = 1.22 V
Part number
MDA72-08N1B
3
1
2
Backsid.
MDA0336E - N-Channel MOSFET
(MagnaChip)
MDA0336E– Common-Drain Dual N-Channel Trench MOSFET 20V
MDA0336E
Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5mΩ
General Description
The MDA0336.
MDA0531E - N-Channel Trench MOSFET
(MagnaChip)
MDA0531E– Common-Drain N-Channel Trench MOSFET 30V
MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ
General Description
The MDA0531E uses.
MDA1000 - Diode Modules
(TECHSEM)
TECHSEM
Features：
n Isolated mounting base 2500V~ n Pressure contact technology with
Increased power cycling capability n Space and weight savings
Ty.
MDA100A - SINGLE-PHASE FULL-WAVE BRIDGE
(Motorola)
MDA100A series (3N246 thru 3N252)
® MOTOROLA
MINIATURE INTEGRAL DIODE ASSEMBLIES
· .. with silicon rectifier chips interconnected and encapsulated .
MDA100G - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MDA100G THRU MDA110G
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 V.
