• Part: CS48N75
  • Description: N-Channel Trench Process Power MOSFET
  • Category: MOSFET
  • Manufacturer: Thinki Semiconductor
  • Size: 0.97 MB
Download CS48N75 Datasheet PDF
Thinki Semiconductor
CS48N75
Description The CS48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features - VDS=70V;ID=68A@ VGS=10V; RDS(ON)<8.4mΩ @ VGS=10V - Special Designed for E-Bike Controller Application - Ultra Low On-Resistance - High UIS and UIS 100% Test Application - 48V E-Bike Controller Applications - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply (TO-220 Heat Sink) G DS Schematic Diagram VDS = 70 V ID = 68A RDS(ON) = 7mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse...