F55NF06 Datasheet - Thinki Semiconductor

F55NF06 N-CHANNEL POWER MOSFET TRANSISTOR

12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching.

F55NF06 Features

* 12 3 TO-252/DPAK

* RDS(ON) = 23mȍ@VGS = 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( CRSS = typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

* SYMBOL U55NF06 P55NF06 F55

F55NF06 Datasheet (299.71 KB)

F55NF06 Datasheet Preview — Preview of F55NF06 PDF

Datasheet Details

Part number:

F55NF06

Manufacturer:

Thinki Semiconductor

File Size:

299.71 KB

Description:

N-channel power mosfet transistor.

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F55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Thinki Semiconductor

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