F55NF06 Datasheet (Thinki Semiconductor) - N-CHANNEL POWER MOSFET TRANSISTOR

F55NF06, N-CHANNEL POWER MOSFET TRANSISTOR

12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

It is mainly suitable electronic ballast, and low power switching

F55NF06 Features

* 12 3 TO-252/DPAK

* RDS(ON) = 23mȍ@VGS = 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( CRSS = typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

* SYMBOL U55NF06 P55NF06 F55