FEP16GTA Datasheet | Thinki Semiconductor

Features Glass passivated chip junction Fast switching for high efficiency Low forward voltage drop and High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on body Mounting position: Any Weight: 2.03 grams .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS|Inverter Car Amplifier and Sound Device System etc.. .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Positive CT mon Cathode Suffix "T" Negative CT mon Anode Suffix "TA" Doubler Series Connection Suffix "TD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. mon Cathode Suffix "T" mon Anode Suffix "TA" Anode and Cathode Coexistence Suffix "TD" FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT SYMBOL FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA UNIT FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 0.98 10.0 250 35...