1GWJ42
Toshiba ↗ Semiconductor
175.14kb
Schottky barrier (high speed rectifier applications).
TAGS
📁 Related Datasheet
1GWJ43 - SCHOTTKY BARRIER (HIGH SPEED RECTIFIER APPLICATIONS)
(Toshiba Semiconductor)
.
1GW3B2AN6 - NAND Flash Memory
(ST Microelectronics)
NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELI.
1G1 - MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
1G1 THRU 1G7
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
Plastic package h.
1G2 - MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
1G1 THRU 1G7
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
Plastic package h.
1G3 - MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
1G1 THRU 1G7
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
Plastic package h.
1G4 - MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
1G1 THRU 1G7
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
Plastic package h.
1G4B41 - Bridge Rectifier
(Toshiba)
..
.
1G4B42 - RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS)
(Toshiba Semiconductor)
.
1G4B42 - SILICON BRIDGE RECTIFIER
(EIC)
1(B,G,J)4B42
PRV : 100 ~ 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low rever.
1G4G - Triode Amplifier
(TUNG-SOL)
.
Stock and price