Part number:
1SS104
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
68.25 KB
Description:
Silicon diode.
.
1SS104
Toshiba ↗ Semiconductor
68.25 KB
Silicon diode.
.
📁 Related Datasheet
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
.
1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.
1SS106 - SILICON SCHOTTKY BARRIER DIODE
(SEMTECH)
1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coe.
1SS106 - Silicon Schottky Barrier Diode
(Renesas)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Featur.
1SS106 - SMALL SIGNAL SCHOTTKY DIODES
(JINAN JINGHENG ELECTRONICS)
R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with g.
1SS108 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good.
1SS110 - Silicon Diode
(Hitachi Semiconductor)
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable f.
