
Part number:
2NU41
Manufacturer:
Toshiba ā Semiconductor
File Size:
152.16kb
Download:
Description:
Super fast recovery rectifier.
2NU41
Toshiba ā Semiconductor
152.16kb
Super fast recovery rectifier.
š Related Datasheet
2NU72 - Transistor
(Tesla Elektronicke)
.
2NU73 - Transistor
(Tesla Elektronicke)
.
2NU74 - Transistor
(Tesla Elektronicke)
.
2N03L05 - Power-Transistor
(Infineon Technologies)
OptiMOSĀ® Power-Transistor
Feature ā¢ N-Channel ā¢ Enhancement mode ā¢ Logic Level ā¢ Excellent Gate Charge x RDS(on)
product (FOM)
ā¢ Superior thermal resi.
2N03L05 - TO220 N-Channel MOSFET
(VBsemi)
2N03L05-VB TO220
2N03L05-VB TO220 Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) (ļ) at VGS = 10 V RDS(on) (ļ).
2N03L20 - Power-Transistor
(Infineon)
OptiMOSĀ® Power-Transistor
Features ā¢ N-channel Logic Level - Enhancement mode ā¢ Automotive AEC Q101 qualified ā¢ MSL1 up to 260Ā°C peak reflow ā¢ 175Ā°C o.
2N04H4 - Power-Transistor
(Infineon Technologies)
OptiMOSĀ® Power-Transistor
Feature ā¢ N-Channel ā¢ Enhancement mode ā¢ 175Ā°C operating temperature ā¢ Avalanche rated ā¢ dv/dt rated
P- TO262 -3-1
SPI80N0.
2N0609 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
Ā·FEATURES Ā·Static drain-source on-resistance:
RDS(on)ā¤9.1mā¦ Ā·100% avalanche tested Ā·Minimum Lot-to-Lot variations for.
2N0612 - N-Channel Power MOSFET
(Infineon)
OptiMOSĀ® Power-Transistor
Feature ā¢ N-Channel ā¢ Enhancement mode ā¢ 175Ā°C operating temperature ā¢ Avalanche rated ā¢ dv/dt rated
SPP77N06S2-12 SPB77N06.
2N0612 - N-Channel MOSFET
(VBsemi)
2N0612-VB TO220
2N0612-VB TO220 Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (ļ)
60
0.011 at VGS = 10 V
0.013 at VGS =.