2SA1315 Datasheet - Toshiba Semiconductor

2SA1315 TRANSISTOR

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector.

2SA1315 Features

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2SA1315 Datasheet (198.91 KB)