2SA1315 TRANSISTOR

Toshiba Semiconductor

Description

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm <.

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Datasheet Specifications

Part number: 2SA1315
Manufacturer: Toshiba ↗ Semiconductor
File Size: 198.91 KB
Datasheet: 2SA1315_ToshibaSemiconductor.pdf
Description: TRANSISTOR

Features

* ed under any applicable laws or regulations.
* The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Pr

Applications

* Power Switching Applications Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 1 A) High-speed switching time: tstg = 1.0 μs (typ. ) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base v

2SA1315 Distributors

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2SA1315 TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SA1315-like datasheet