2SA1315 Datasheet - Toshiba Semiconductor

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2SA1315 TRANSISTOR

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm <.

2SA1315_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1315

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

198.91 KB

Description:

TRANSISTOR

Features

* ed under any applicable laws or regulations.
* The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Pr

Applications

* Power Switching Applications Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 1 A) High-speed switching time: tstg = 1.0 μs (typ. ) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base v

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