2SC5550 Datasheet - Toshiba Semiconductor

2SC5550 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System 2SC5550 Unit: mm Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pu.

2SC5550_ToshibaSemiconductor.pdf