2SC6033
TOSHIBA Transistor Silicon NPN Epitaxial Type
Unit : mm
High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications
ＴＳＭ
0 . 9 5 0 .9 5
2. 9± 0 . 2 1. 9± 0. 2
- -
- High DC current gain: h FE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High-speed switching: tf = 38 ns (typ.)
1 2 3
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10s DC DC Pulse
VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 1) Tj Tstg
100 80 50 6 2.5 5 0.3 1.00 0.625 150
- 55 to 150
V V V V A A W °C °C
1. Base 2. Emitter 3. Collector JEDEC JEITA TOSHIBA
－ － － 2-3S1A
Weight: 0.01g (Typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm )
0 ～ 0. 1
Characteristics
Symbol
Rating
Unit
0. 7± 0 .0 5
Maximum Ratings (Ta = 25°C)
2004-07-01
0. 16± 0 . 0 5
0 .1 5
0 ....
