2SK2311
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV)
Chopper Regulator, DC- DC Converter and Switching Regulator Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance
: RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance
: |Yfs| = 16 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
60 60 ±20 25 100 40
25 3.5 150
- 55 to 150
V V V A A W m J
A m J °C °C
Note: Using continuously under heavy loads (e.g. the application of...
