2SK2311 Datasheet - Toshiba Semiconductor

2SK2311 Silicon N-Channel MOSFET

2SK2311 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2311 Chopper Regulator, DC DC Converter and Switching Regulator Applications Unit: mm z 4-V gate drive z Low drain source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance : |Yfs| = 16 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C).

2SK2311 Features

* compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompli

2SK2311_ToshibaSemiconductor.pdf