2SK2312
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
- π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications z 4-V gate drive z Low drain- source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 13 mΩ (typ.) : |Yfs| = 40 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 45 701 45 4.5 150
- 55 to 150 Unit V V V A A W m J A m J °C °C
Pulse (Note 1)
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 1.9 g (typ.)
Note: Using continuously under heavy...
