2SK2313 Datasheet - Toshiba Semiconductor

2SK2313 Silicon N-Channel MOSFET

2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2313 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance : |Yfs| = 60 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characte.

2SK2313 Features

* e use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and re

2SK2313_ToshibaSemiconductor.pdf