2SK2314
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admittance : |Yfs| = 16 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
100 100 ±20 27 108 75
27 7.5 150
- 55 to 150
V V V A A W m J
A m J °C °C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g...
