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2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 10 40 125 270 10 12.5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.
2SK2601 Datasheet
