2SK2601 Datasheet (Toshiba Semiconductor)

2SK2601, N-Channel MOSFET

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage

2SK2601 Features

* export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use P