2SK2915
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 16 64 150 1026 16 15 150
- 55~150 Unit V V V A W m J A m J °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-16C1B
Weight: 4.6 g (typ.)
Note: Using...
