2SK2916
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
DC- DC Converter, Relay Drive and Motor Drive Applications
Unit: mm z Low drain- source ON resistance
: RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance
: |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
500 500 ±30 14 56 80
14 8 150
- 55~150
V V V A A W m J
A m J °C °C
JEDEC
- JEITA
- TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads...
