2SK2916 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2916 DC *DC Converter, Relay Drive and Motor Drive Appl.

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Datasheet Specifications

Part number: 2SK2916
Manufacturer: Toshiba ↗ Semiconductor
File Size: 408.32 KB
Datasheet: 2SK2916_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Features

* ity of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with a

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 0.35 Ω (typ. ) z High forward transfer admittance : |Yfs| = 11 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

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2SK2916 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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