2SK2916 Datasheet - Toshiba Semiconductor

2SK2916 Silicon N Channel MOS Type Field Effect Transistor

2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2916 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit .

2SK2916 Features

* ity of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with a

2SK2916_ToshibaSemiconductor.pdf