2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 18 72 90 915 18 9 150
- 55 to 150 http://..net/
Unit V V V A W m J A m J °C °C
Pulse (Note 1)
Drain power dissipation (Ta = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g....
