2SK3935 Datasheet - Toshiba Semiconductor

2SK3935 N-Channel MOSFET

www.DataSheet4U.com 2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3935 Switching Regulator Applications z Low drain-source ON resistance: z High forward transfer admittance: z Low leakage current: RDS (ON) = 0.18 Ω (typ.) |Yfs| = 10 S (typ.) Unit: mm IDSS = 100 μA (max) (VDS = 450 V) z Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-.

2SK3935 Features

* iances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily in

2SK3935_ToshibaSemiconductor.pdf