2SK879 Datasheet - Toshiba Semiconductor

2SK879 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK879 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature.

2SK879_ToshibaSemiconductor.pdf