3SK249 - N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR

Toshiba

Datasheet Details

Part number	3SK249
Manufacturer	Toshiba
File Size	676.79 KB
Description	N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR
Datasheet	3SK249 Datasheet

Other Datasheets by Toshiba

Part Number	Description
3SK240	GaAs N-Channel Dual Gate MES Type FET
3SK207	Silicon N Channel Dual Gate MOS Type FET
3SK225	Silicon N Channel Dual Gate MOS Type FET
3SK226	Silicon N Channel Dual Gate MOS Type FET
3SK256	Silicon N Channel Dual Gate MOS Type FET
3SK257	Silicon N Channel Dual Gate MOS Type FET
3SK258	Silicon N Channel Dual Gate MOS Type FET
3SK259	Silicon N Channel Dual Gate MOS Type FET
3SK260	Silicon N Channel Dual Gate MOS Type FET
3SK274	N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)

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TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure.: NF = 1.5dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range VDS VG1S VG2S ID PD Tch Tstg 12.5 ±8 ±8 30 100 125 −55~125 V V V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.