2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction t
A1020-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1020
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
187.03 KB
Description:
2sa1020.