A1020 Datasheet - Toshiba Semiconductor

A1020 2SA1020

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction t.

A1020-ToshibaSemiconductor.pdf