2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol R
A1163-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1163
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
303.70 KB
Description:
2sa1163.