C2073A Datasheet - Toshiba Semiconductor

C2073A Silicon NPN Transistor

2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.5 A Collector power dissipation Junction temperature Ta = 25°C Tc = 25°C PC Tj 2.0 W 25 150 °C 1.Base 2.Collec.

C2073A_ToshibaSemiconductor.pdf