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C2669 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

C2669

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

291.14 KB

Description:

2SC2669

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) * Recommended for FM IF, OSC stage and AM CONV, IF stage.

Maximum Ratings (Ta = 25°C) Characteristics Col

C2669-ToshibaSemiconductor.pdf

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C2669, 2SC2669

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage.

Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC I

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