Datasheet Details
- Part number
- C2669
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 291.14 KB
- Datasheet
- C2669-ToshibaSemiconductor.pdf
- Description
- 2SC2669
C2669 Description
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power .
C2669 Applications
* Unit: mm
* High power gain: Gpe = 30dB (typ. ) (f = 10.7 MHz)
* Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipat
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