Datasheet Details
Part number:
C2669
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
291.14 KB
Description:
2SC2669
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) * Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C) Characteristics Col