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C3710A 2SC3710A

C3710A Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit: mm * Low collector s.

C3710A Features

* related software and technology may be controlled under the Japanese Foreign Exch

C3710A Applications

* Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.4 V (max)
* High-speed switching: tstg = 1.0 μs (typ. )
* Complementary to 2SA1452A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter v

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2SC3710A Toshiba Semiconductor
Toshiba Semiconductor C3710A-like datasheet