• Part: C5198
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 149.68 KB
Download C5198 Datasheet PDF
Toshiba
C5198
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm - High breakdown voltage: VCEO = 140 V (min) - plementary to 2SA1941 - Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Tj °C Tstg - 55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are...