D1509 Datasheet - Toshiba Semiconductor

D1509 Silicon NPN Epitaxial Type Transistor

2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 .

D1509-ToshibaSemiconductor.pdf