D2353 Datasheet - Toshiba Semiconductor

D2353 2SD2353

2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.datasheet4u.com Unit: mm High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C D.

D2353_ToshibaSemiconductor.pdf