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HN7G02FU - Power Management Switch Application

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HN7G02FU TOSHIBA Multi Chip Discrete Device www.DataSheet4U.com HN7G02FU Unit: mm Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA Weight: g (typ.
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