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HN7G02FU Datasheet - Toshiba Semiconductor

HN7G02FU Power Management Switch Application

HN7G02FU TOSHIBA Multi Chip Discrete Device www.DataSheet4U.com HN7G02FU Unit: mm Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 <.

HN7G02FU Datasheet (220.29 KB)

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Datasheet Details

Part number:

HN7G02FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

220.29 KB

Description:

Power management switch application.

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HN7G02FU Power Management Switch Application Toshiba Semiconductor

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