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HN7G09FE Datasheet - Toshiba Semiconductor

HN7G09FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

HN7G09FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

286.84 KB

Description:

Power management switch applications.

HN7G09FE, Power Management Switch Applications

HN7G09FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G09FE Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA

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