J377 Datasheet - Toshiba Semiconductor

J377 2SJ377

www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L π MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = <.

J377 Features

* ical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related so

J377_ToshibaSemiconductor.pdf