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JDP2S01E Datasheet - Toshiba Semiconductor

JDP2S01E UHF~VHF Band RF Attenuator Applications

JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type www.DataSheet4U.com JDP2S01E UHF~VHF Band RF Attenuator Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65 Ω (typ.) Low capacitance: CT = 0.65 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tst.

JDP2S01E_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

JDP2S01E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

125.02 KB

Description:

Uhf~vhf band rf attenuator applications.

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