K16A60W Datasheet, MOSFET, Toshiba Semiconductor

K16A60W Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS

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Part number:

K16A60W

Manufacturer:

Toshiba ↗ Semiconductor

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241.64kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

K16A60W Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junctio

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K16A60W

Toshiba Semiconductor

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