K16A60W Datasheet - Toshiba Semiconductor

K16A60W Silicon N-Channel MOSFET

K16A60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu

K16A60W Datasheet (241.64 KB)