K30A06J3A Datasheet - Toshiba Semiconductor

K30A06J3A TK30A06J3A

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ.

K30A06J3A Features

* nted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limi

K30A06J3A Datasheet (190.16 KB)