K3417 Datasheet - Toshiba Semiconductor

K3417, 2SK3417

2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications * * * * *

Applications

* Reverse-recovery time: trr = 60 ns (typ. ) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ. ) High forward transfer admittance: ïYfsï = 4.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vt

K3417-ToshibaSemiconductor.pdf