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2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3417
Switching Regulator Applications
· · · · · · Reverse-recovery time: trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ïYfsï = 4.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0~4.
K3417 Datasheet
