K6A65D Datasheet - Toshiba Semiconductor

K6A65D TK6A65D

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Dra.

K6A65D_ToshibaSemiconductor.pdf