MIG20J503H Datasheet - Toshiba Semiconductor

MIG20J503H Intelligent Power Module

Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol Pin Description PGND U U VBB U PGND V V VBB V PGND W W VBB W CW BS W SGND W IN Z IN W FO W VCC W CV BS V SGND V IN Y IN V FO V VCC V CU BS U SGND U IN X IN U FO U VCC U U-Phase Power Ground pin (conn.

TOSHIBA Intelligent Power Module MIG20J503H MIG20J503H MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI (silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without .

MIG20J503H Features

* The 4th generation trench gate thin wafer NPT IGBT is adopted.

* FRD is built in.

* The level shift circuit by high-voltage IC is built in.

* The simplification of a high side driver power supply is possible by the bootstrap system.

* Short circuit protectio

MIG20J503H-ToshibaSemiconductor.pdf