MP4208 Datasheet - Toshiba Semiconductor

MP4208 P-Channel Power MOSFET

MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV in One) MP4208 High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching 4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) Low leakage current: IGSS = ±10 µ.

MP4208 Features

* instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

MP4208 Datasheet (189.22 KB)