MP4212 DUAL-Channel Power MOSFET

Toshiba Semiconductor

Description

MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch.

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Datasheet Specifications

Part number: MP4212
Manufacturer: Toshiba ↗ Semiconductor
File Size: 275.85 KB
Datasheet: MP4212_ToshibaSemiconductor.pdf
Description: DUAL-Channel Power MOSFET

Features

* Capacitance
* VDS 5000 3000
* 2.0 Vth
* Tc Vth (V) Gate threshold voltage (pF)
* 1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25°C
* 0.3
* 1
* 3
* 10
* 30
* 100 Coss Ciss C Capacitance
* 1.2

Applications

* H-Switch Driver
* 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ. ) (N-ch) 160 mΩ (typ. )

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MP4212 DUAL-Channel Power MOSFET Toshiba Semiconductor

Toshiba Semiconductor MP4212-like datasheet