* Capacitance
* VDS 5000 3000
* 2.0 Vth
* Tc Vth (V) Gate threshold voltage (pF)
* 1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25°C
* 0.3
* 1
* 3
* 10
* 30
* 100 Coss Ciss C Capacitance
* 1.2
MP4212
Toshiba ↗ Semiconductor
275.85 KB
Dual-channel power mosfet.
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch.
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