RN1224
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800m A) l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l plementary to RN2221~2227 Unit: mm
Equivalent Circuit
Type No. RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN1221~1227 RN1221~1224 Emitter-base voltage RN1225, 1226 RN1227 Collector current Collector power dissipation Junction temperature Storage temperature range RN1221~1227 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 10 5 6 800 300 150
- 55~150 m A m W °C °C V Unit V...
