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RN1313 - Silicon NPN Epitaxial Type Transistor

This page provides the datasheet information for the RN1313, a member of the RN1312 Silicon NPN Epitaxial Type Transistor family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2312 to RN2313 3. Equivalent Circuit 4. Packaging and Pin Assignment USM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation.

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Datasheet preview – RN1313

Datasheet Details

Part number RN1313
Manufacturer Toshiba Semiconductor
File Size 647.60 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet RN1313 Datasheet
Additional preview pages of the RN1313 datasheet.

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Full PDF Text Transcription

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RN1312,RN1313 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1312,RN1313 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2312 to RN2313 3. Equivalent Circuit 4. Packaging and Pin Assignment USM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1998-02 2021-08-24 Rev.2.0 5.
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