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SSM3J108TU Datasheet - Toshiba Semiconductor

SSM3J108TU Field Effect Transistor Silicon P-Channel MOS Type

SSM3J108TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS = 1.8 V) Ron = 230mΩ (max) (@VGS = 2.5 V) Ron = 158mΩ (max) (@VGS = 4.0 V) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain p.

SSM3J108TU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J108TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

175.98 KB

Description:

Field effect transistor silicon p-channel mos type.

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SSM3J108TU SSM3J108TU Field Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor

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