SSM3J108TU
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
High Speed Switching Applications
- - 1.8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS =
- 1.8 V) Ron = 230mΩ (max) (@VGS =
- 2.5 V) Ron = 158mΩ (max) (@VGS =
- 4.0 V)
2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating
- 20 ±8
- 1.8
- 3.6 800 500 150
- 55~150 Unit V V
1 2 m W °C °C
0.7±0.05
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please...
